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You are able to modify the stated parameters, and Evaluate it that has a "great" consequence which requires 2 hrs siumlation time. Based upon your conditions, you can quicken the simulation time.

So can any person be sure to explain how FET with low threshold voltage has bigger pace and higher leakage current while FET with higher threshold is going to be slow but reduced on electrical power?

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That means I should simulate the circuit plenty of situations to acquire the effects but the issue is that each simulation can take about two hours and just helps make the operate pretty gradual.

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yes due to the fact in LVT threshhold voltage is minimal turning on from off posture is going to be quick, but what about turning from the device from on placement? since threshhold voltage is lower (0.2V) if the applied gate voltage is 1V it will need to drop atleast 0.8V to turn off the LVT transistor.

The situation is for my investigate I really need to do such things as sweep voltage, frequency, load resistance etcetera. to analyse their impact on the output

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Commonly this occurs any time you externally wire a crystal and so on. - this introduces an incredibly large pace oscillator which bottlenecks the simulation and is totally superfluous in any case. Clock frequency is click here specified like a residence of the microcontroller system.